SG01D-5Lens Concentrator Lens SiC UV Photodiode

SG01D-5LENS

‍‍Concentrator lens SiC based UV photodiode Avirtual =11.0 mm2‍‍

◆ SG01D-5Lens SiC UV Photodiode General features

Properties of the SG01D-5LENS UV photodiode

• Broadband UVA+UVB+UVC, PTB reported high chip stability, for fame detection
• Radiation sensitive area A =11.0 mm2
• TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
• 10µW/cm2 peak radiation results a current of approx. 350 nA

About the material Silicon Carbide (SiC)

SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity) is also low, < 0.1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably.

Options
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2 Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).

◆ SG01D-5Lens SiC UV Photodiode Nomenclature

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◆ SG01D-5Lens SiC UV Photodiode Specifications‍