Piezoresistive Silicon Pressure Sensor Chips

In 1961, Shenyang Academy of Instrumentation Science started to research and manufacture silicon piezoresistive wafers. With excellent technology and well educated employees, we become the market leader in China for piezoresistive die.
We establish our reputation for cost-effective and quality. The pressure dies have been employed in pressure transducers widely in the world.
Features:
Self-intellectual property and manufacture workmanship silicon Micromachining
4"Silicon wafer workmanship flow and controllable workmanship in batch production, various ranges
Tiny size structure, high consistency and economical wholesale price
High accuracy\long stability and reliability

No.	Item	Specifications
Gauge pressure	Absolute Pressure
35KPa,100KPa,250KPa, 600KPa,1MPa,1.6MPa,2.5MPa	100KPa,250KPa,600KPa, 1MPa,1.6MPa,2.5MPa,6MPa, 10MPa,25MPa,40MPa,60MPa
02	Offset	≤30mV@1mA
03	Span Output	≥30mA(≤35KPa) ; ≥60mV (other scale)
04	Nonlinearity	±0.25%F.S.
05	Power Supply	1 mADC (typical), 5V (optional)
06	Zero Temperature Coefficient	±0.1%F.S./ºC
07	Sensitivity Temperature Coefficient	±0.1%F.S./ºC(≤35KPa) ±0.05%F.S./ºC(other scale)
08	Overload Capacity	2 times scale(≤10MPa);1.5times scale(>10MPa)
09	Bridge Resistance	5 (1±20%) KΩ
10	Operating Temperature	-45ºC~+100ºC
11	Short Term Stability	±0.05%F.S./8h
12	Chip Size(um)	2700×3450
Notes	1.Calculating method of nonlinearity is the Least Squares Method. 2.Short Term Stability is tested under 25ºC,5VDC. 3.Other results are attained with the reference temperature 25ºC,1mADC. 4.Silicon wafer thickness c=400um,glass thickness d=800um