Manufacturer: Toshiba
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: VS8-8
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: - 30 V
Id - Continuous Drain Current: - 6 A
Rds On - Drain-Source Resistance: 28 mOhms
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single Hex Drain
Pd - Power Dissipation: 2.5 W
Channel Mode: Enhancement
Packaging: Reel
Height: 0.8 mm
Length: 2.9 mm
Series: TPCF8104
Transistor Type: 1 P-Channel
Width: 1.5 mm
Brand: Toshiba
Fall Time: 22 ns
Product Type: MOSFET
Rise Time: 2.8 ns
Factory Pack Quantity: 4000
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