GH-SW1280 InGaAs area image sensors are two-dimensional image sensors. The ingaas sensor has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and
back-illuminated InGaAs photodiodes for short wavelength infrared (SWIR, 900-1700) and extended wavelength infrared (Vis-SWIR, 400-1700) regions.
The package includes a Thermo Electric Cooler (TEC) that can utilized for cooling the FPA for high signal-to-noise ratio (SNR).
It is well-adapted to a large range of applications, such as long range surveillance at severe weather conditions (fog, haze, rain, smoke, dust), hyperspectral imaging, remote sensing and science.
TECHNICAL INFORMATION OF GH-SW1280
Key Features GH-SW1280
Sensor Type InGaAs PIN-Photodiode
Format 1280 x 1024
Pixel Pitch 15 μm
Spectral Response 0.9-1.7μm
Integration Type Snapshot
Readout Modes ITR, IWR, CDS
Exposure Time 1μs to full frame
Maximum Full Frame Rate 100 Hz
Maximum Pixel Rate 22MHz
Output Signal Swing ≤2V
Temperature Sensor Output Yes
Quantum Efficiency(QE) >70% (1.0um ~ 1.6um)
Noise with ROIC 40e- @HG
Dark Current 30fA@0.1V&18℃
Array Operability > 99.5% ( Minimum )
Non Uniformity without Correction <5%
Dimension (W x H x D) 40mm × 36mm × 7.2mm
Windows Quartz/ Sapphire
Number of Pins 30-pin Metal DIP Package
Packaging Characteristics Hermetically sealed
Operating Temperature - 40℃ to 70℃
Storage Temperature - 40℃ to 70℃
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