The system is designed for operation in clean room : Class 100 ( 9m2) for machine unit; Class 10 000 (10 m2 ) for control unit. Power requirements: 220 V, 50 Hz.
Compatibility
Other Features
Chrome, chrome + oxide, molybdenum, iron oxide. Pellicle-protected reticles can also be inspected. A pellicle frame up to 8 mm high from top or bottom surfaces is acceptable.
Reticle Plating Types
Working field size is 153 mm x 153 mm
Reticle Sizes:
In low magnification mode - 15.0 mm2/s (12 min over 100 mm x 100 mm field)
In medium magnification mode - 5.0 mm2/s (35 min over 100 mm x 100 mm field)
In high magnification mode - 2.5 mm2/s (1 hr 10 min over 100 mm x 100 mm field)
Throughput
Low magnification mode is set by changing the objective lens.
Inspection Modes
Minimum sizes of detectable defects are: 0.7 ?m x 0.7 ?m and 0.5 ?m x 1.0 ?m at 0.95 detection probability. When working with any detection threshold (0.5 mm, 1.0 mm, 2.0 mm ) the mode of program filtering can be switched on.
Detection Threshold
For photomask inspection die-to-database comparison method is used.
The die-to-database comparison method makes the EM-6029B system universal for automatic detection of photomask pattern defects of all types.
The system is designed for automatic detection of pattern defects on 10:1 and 5:1 projection lithography reticles used in IC, semiconductors manufacture.
Automatic Mask Inspection System is designed for automatic detection of mask pattern defects by die-to-database comparison
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