MITSUBISHI RF MOSFET Amplifier Power Module, RA60H1317M

60W RF MOSFET Amplifier Power Module for 12.5V mobile radios that operate in 135-175MHz range
Battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without gate voltage (VGG = 0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60dB. Output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. Nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG = 5V, the typical gate current is 1mA
Designed for non-linear FM modulation, may be also used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power
Enhancement-mode MOSFET transistors (IDD = ~0 @ VDD = 12.5V, VGG = 0V)
Pout > 60W,

RF MOSFET Amplifier Power Module, RoHS Compliant, 135-175MHz, 60W, 12.5V, 3-stage Amp. for Mobile Radios

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