Mariana Trench Etch system

A 300mm, next-generation product based on Applieds extensive experience in MERIE technology and designed for precision process tuning, the Mariana Trench Etch meets the demands for high mask selectivity, etch depth uniformity, and profile control for progressively smaller critical dimensions (CDs). The system enables chipmakers to etch trenches less than 100nm wide at aspect ratios greater than 80:1 for capacitor structures in 70nm devices and beyond. Independent gas injection enhances CD control, complementing the chambers tunable gas distribution and multiple frequency configuration in achieving 2% etch depth non-uniformity to the wafers edgeperformance unrivalled in the industry. A tunable, dual-zone, high-temperature electrostatic chuck and specialized chemistry enhance mask selectivity and stringent CD control even at high etch rates. Process robustness is sustained across a wide process window for power, magnetic field, pressure, temperature, and gas flow. The systems high conductance chamber, controlled chamber environment, and advanced process control implemented via in-situ metrology and process state monitoring create ideal conditions for superior process stability and repeatability across the wafer, from wafer to wafer and from system to system.Closed-loop temperature control maximizes mean wafers between cleans. Simplified design streamlines maintenance and facilitates the industrys shortest mean time to clean and recover. The dual-zone, ceramic electrostatic chuck and advanced chamber materials aid stringent defect control and lower consumables costs.

Applied Centura Mariana Trench Etch