AG ASSOCIATES HEATPULSE 210 RAPID THERMAL PROCESSOR

Replacement Quartzware

Customization

Research wafer trays available for either Si or GaAs in 2", 3", 4"
sizes; GaAs Susceptors; and Slip-Free Rings.

Extended Warranty: 12, and 24 additional months

 

Options:

Engineering Solutions LLC expressly warrants a warranty of 12 months Standard with all heatpulse sales.

Warranty

16 bit Precision on A/D  

Process	Role of RTP
Anneal	Improve concentration profile of dopants in silicon substrate after implantation
Oxidation	Form a uniform layer of silicon dioxide to insulate a circuit element
Silicidation	Decrease the resistivity of tungsten silicide or titanium silicide caps on polycrystalline device gates
Nitridization	Form a silicon nitride layer for insulation, protection against oxidation, or anti-reflective coatings
BSPG Reflow	Improve the surface characteristics such as uniformity for boron phosphorous spin on glass (BPSG). Also called densification
Ion Activation	Cause implanted ions such as arsenic and boron to integrate into the silicon crystal lattice to improve surface conductivity
Platinum Sintering	Form a thermionic bond between platinum and silicon to increase the current-carrying capability of a circuit
Salicidation	Self-aligning Silicidation. Increase the conductivity of refractory metal silicides used to connect gate material to metallic vias. Similar to Silicidation

 

GUI software Standard , upgrade to P-CAT

Post-anneal sheet resistivity measured on a 100mm wafer annealed at 1100