AG ASSOCIATES HEATPULSE 310 RAPID THERMAL PROCESSOR
Product Details
Replacement Quartzware
Customization
Research wafer trays available for either Si or GaAs in 2", 3"
sizes; GaAs Susceptors; and Slip-Free Rings.
Extended Warranty: 12, and 24 additional months
Options:
Engineering Solutions LLC expressly warrants a warranty of 12 months Standard with all heatpulse sales.
Warranty
| Process | Role of RTP |
| Anneal | Improve concentration profile of dopants in silicon substrate after implantation |
| Oxidation | Form a uniform layer of silicon dioxide to insulate a circuit element |
| Silicidation | Decrease the resistivity of tungsten silicide or titanium silicide caps on polycrystalline device gates |
| Nitridization | Form a silicon nitride layer for insulation, protection against oxidation, or anti-reflective coatings |
| BSPG Reflow | Improve the surface characteristics such as uniformity for boron phosphorous spin on glass (BPSG). Also called densification |
| Ion Activation | Cause implanted ions such as arsenic and boron to integrate into the silicon crystal lattice to improve surface conductivity |
| Platinum Sintering | Form a thermionic bond between platinum and silicon to increase the current-carrying capability of a circuit |
| Salicidation | Self-aligning Silicidation. Increase the conductivity of refractory metal silicides used to connect gate material to metallic vias. Similar to Silicidation |
GUI software Standard , upgrade to P-CAT
.
Maximum Non-uniformity:
- Country:United States
- telephone:1-18007451267
| Extended Warranty: 12, and 24 additional months |
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