UPA507TE Power MOSFET

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Functions	Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
Applications	D/D converters of portable equipment such as DSCs and information equipment such as HDDs
Features	Pch MOS FET and SBD integrated in one package MOS FET: 1.8 V drive type with low on-resistance SBD: Low VF, low dissipation
Performances	Ratings MOS FET:VDSS = -20 V(VGS = 0 V), VGSS = -+8 V(VDS = 0 V), ID(DC) = -+2 A SBD:VRRM = 30 V, IF(AV) = 1 A Characteristics MOS FET:RDS(on)1 = 68 m ohm TYP. (VGS = -4.5 V, ID = -1.0 A) RDS(on)2 = 84 m ohm TYP. (VGS = -2.5 V, ID = -1.0 A) RDS(on)3 = 109 m ohm TYP. (VGS = -1.8 V, ID = -1.0 A) SBD:VF = 0.35 V TYP. (IF = 1.0 A)

Country:United States
telephone:1-408-588-6000

Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))

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UPA507TE Power MOSFET

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NEC Electronics America, Inc

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