Product Information Menu Product Name:UPA507TE
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Functions
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Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
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Applications
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D/D converters of portable equipment such as DSCs and
information equipment such as HDDs
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Features
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Pch MOS FET and SBD integrated in one package
MOS FET: 1.8 V drive type with low on-resistance
SBD: Low VF, low dissipation
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Performances
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Ratings MOS FET:VDSS = -20 V(VGS = 0 V), VGSS = -+8 V(VDS = 0 V), ID(DC) = -+2 A
SBD:VRRM = 30 V, IF(AV) = 1 A
Characteristics MOS FET:RDS(on)1 = 68 m ohm TYP. (VGS = -4.5 V, ID = -1.0 A)
RDS(on)2 = 84 m ohm TYP. (VGS = -2.5 V, ID = -1.0 A)
RDS(on)3 = 109 m ohm TYP. (VGS = -1.8 V, ID = -1.0 A)
SBD:VF = 0.35 V TYP. (IF = 1.0 A)
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