solar wafer

 

 

 

scratches and cracks

Surface: Clean and free from staining, free from

 

 

 

 

 

Visual

 

 

 

breakable direction)

Edge Orientation: <100> (diagonal - <110> The most

 

 

 

Saw Traces: < 5 um

 

 

 

 

typically)

 

Surface Saw Damage Depth: <20 um (< 15 um

 

 

 

 

 

method)

Bow: 200-300 um (Randomly checked by contact

 

 

Total Thick Variation: < 40 um

 

 

 

Thickness: 220 +/- 30 um

 

 

Tolerance/accuracy: +/- 1 mm

 

 

 

 

Diagonal: 150 mm

 

 

Tolerance/accuracy: +/- 0.5 mm

 

 

 

Dimensions: 125 x 125 mm

 

 

 

Physical & Dimensional

 

 

Minority Carriers Lifetime: > 10

 

 

 

Resistivity: 0.5-3 Ohm-cm

 

 

 

 

Electrical

 

 

 

 

 

 

 

 

Oxygen Content: < 1.0x1018 at/cm3

 

 

Carbon Content: < 1,0x1017 at/cm3

 

 

Etch Pit Defects (EPD): <2000 cm2

 

 

Quality of Ingot: Dislocation free

 

 

Crystal Orientation: <100> +/- 2?

 

Conductivity Type: P-Type (Boron Doped)

 

 

 

Growing Method: Cz

 

 

Material: Monocrystalline Silicon

 

 

 

 

Technology

 

5-inch Mono Wafer Spec.

 

solar wafer spec