Laser Diode

Remark :
1) Semi-insulating GaAs substrates are used for MESFET, HEMT and HBT and Semi-conductive GaAs substrates are for LD.
2) The following epitaxial layers are available; GaAs, AlGaAs, InGaAs, InGaP, AlAs
3) The following epitaxial layers are available; AlGaAs

Metal Organic Vapor Phase Epitaxial ( MOVPE ) Wafers 1) 2) for the following devices
.MESFET (MEtal Semiconductor Field Effect Transistor)
.HEMT (High Electron Mobility Transistor)
.HBT (Hetero-junction Bipolar Transistor)
.LD (Laser Diode)
Liquid Phase Epitaxial ( LPE ) Wafers 3) for the following devices
.LED (Light Emitting Diode)
GET supplies MOVPE and LPE wafers that satisfy customers' various requirements of specifications for epitaxial wafers and all GET 's strength is always directed toward supporting an accomplishment of each individual customer's purpose.
GET is supplying MOVPE wafer products and LPE wafer products for SH(Single-Hetero) structure red LED under the contract of OEM with Hitachi Cable, Ltd and supplying LPE wafer products for DH(Double-Hetero) structure red LED through GET 's own sales routes.