GD6009-100
1310/1550nm InGaAs PIN Photodiode for 0.5 Gb/sec
Features
* Planar diode on semi-insulating substrates
* Low dark current with high responsivity
* Bandwidths up to 0.5 GHz
* Customer specified configurations available
Applications
* Short reach optical networks
Chip Dimension (typical)
* Aperture Diameter : 300
Features * Planar diode on semi-insulating substrates * Low dark current with high responsivity * Bandwidths up to 0.5 GHz |
GD6007-100 1310/1550nm InGaAs PIN Photodiode for 1-3 Gb/sec Features * Mesa diode on semi-insulating substrates * Anode/Cathode bonding pads on front side * Low dark current & capacitance with high responsivity * Bandwidths up to 5 GHz * Customer specified configurations ...
Come From Crystotech
GD6008-100 1310/1550nm InGaAs PIN Photodiode for 10 Gb/sec Features * Mesa diode on semi-insulating substrates * Anode/Cathode bonding pads on front side * Low dark current & capacitance with high responsivity * Bandwidths up to 12 GHz * Customer specified configurations ...
Come From Crystotech