GD6008-100 1310/1550nm InGaAs PIN Photodiode for 10 Gb/sec
Product Details
GD6008-100
1310/1550nm InGaAs PIN Photodiode for 10 Gb/sec
Features
* Mesa diode on semi-insulating substrates
* Anode/Cathode bonding pads on front side
* Low dark current & capacitance with high responsivity
* Bandwidths up to 12 GHz
* Customer specified configurations available
Applications
* Short reach optical networks
* 1.0 to 12.5 Gigabit Ethernet, fiber channel
Chip Dimension (typical)
* Aperture Diameter : 36
- Country:Taiwan
- telephone:886-886 3 6686008 3610
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Features * Mesa diode on semi-insulating substrates * Anode/Cathode bonding pads on front side |
