650nm RCLED(wafer,chip)

In general, the RCLED is consisted of a Fabry-Perot cavity, sandwiched between upper and lower distributed Bragg reflectors (DBRs). The cavity is generally designed with 1- thick, and the quantum wells (QWs) are embedded at the antinode of the standing wave cavity mode. The photons are generated from the QWs, oscillating in the cavity, and finally coupling out from  one side of DBR, which has lower reflectivity. In comparison to typical light-emitting diodes, the RCLEDs have three time higher external quantum efficiency and the divergent angle is about 100 degrees.

In general, the RCLED is consisted of a Fabry-Perot cavity, sandwiched between upper and lower distr

  • Model Number:WARC0650PO121A3Z
  • Country:Taiwan
  • telephone:886-3-5973077
Model Number: WARC0650PO121A3Z
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650nm EELD (wafer,chip,TO-can)

Type:Laser Diode Model Number:WSEE0650LP000A2Z EEL (Edge Emitting Laser ) is a edge emitting semiconductor laser with a wide wavelength range of 65 ...

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870nm RCLED(wafer,chip)

Model Number:CZRC0870IR111A0Z In general, the RCLED is consisted of a Fabry-Perot cavity, sandwiched between upper and lower distr ...

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