2N3645 Diode

Military/High-Rel :   N
V(BR)CEO (V) :  60
V(BR)CBO (V) :  60
I(C) Max. (A) :  500m
Absolute Max. Power Diss. (W) :  300m
Maximum Operating Temp (C) :  125
I(CBO) Max. (A) :  35n
@V(CBO) (V) (Test Condition) :  50
h(FE) Min. Current gain. :  100
h(FE) Max. Current gain. :  300
@I(C) (A) (Test Condition) :  150m
@V(CE) (V) (Test Condition) :  10
f(T) Min. (Hz) Transition Freq :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
V(CE)sat Max. (V) :  1.6
@I(C) (A) (Test Condition) :  500m
@I(B) (A) (Test Condition) :  50m
h(fe) Min. SS Current gain. :  2.0
@I(C) (A) (Test Condition) :  50m
@V(CE) (V) (Test Condition) :  20
@Freq. (Hz) (Test Condition) :  100M
t(d) Max. (s) Delay time. :  25n
t(r) Max. (s) Rise time :  35n
t(on) Max. (s) On time. :  40n
t(s) Max. (s) Storage time. :  70n
t(f) Max. (s) Fall time. :  50n
t(off) Max. (s) Off time :  100n
Package Style :  TO-105
Mounting Style :  T
Description : 

SI PNP LP HF BJT

  • Model Number:2N3645
  • Brand Name:AMERICAN MICROSEMICONDUCTOR
  • Country:United States
  • telephone:1-973-377-9566
Delivery Time: IN STOCK
Minimum Order Quantity: 5 Piece/Pieces
Payment Terms: T/T,VISA, MASTER CARD, AMERICAN EXPRESS, PAYPAL
Port: NEWARK
Model Number: 2N3645
Brand Name: AMERICAN MICROSEMICONDUCTOR
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