Alingap LED Diodes

AlInGaP LED DICE

Part NO.: AOC-112GLA (Rev. 3.2)
Features
Green Color Emission
- Excellent Performance & High Efficiency
- Great Reliability Even In Harsh Environment

Description
AOC-112GLA is a green color emitting AlInGaP LED grown by MOCVD technique. Its
structure enables enhanced quantum efficiency and therefore a greater light intensity. This
device is designed for use in high ambient light condition.

Chip Dimensions
Chip Size:12 mil x 12 mil (300um x 300um)
Emitting Area:11mil x 11mil(275um x 275um)
Bonding Pad:4.0 mil (100um)
Chip Thickness:7 mil (175um)
Tolerance ? 1 mil (25um)

1. Anode
2. GaP Window Layer
3. AlInGaP Cladding
4. AlInGaP CART MQW*
5. Lower Cladding
6. DBR Layer
7. GaAs Substrate
8. Backside Metallization

Specification:
Measuring Item______Symbol__Condition___Min___Typ___Max___Unit
Forward Voltage______VF______IF=20mA____1.7____-____2.2____V
Reverse Voltage______VR______IR=10uA_____9_____-_____-_____V
Dominant Wavelength__d_______IF=20mA____550____-___566____nm
Grades Available X1 ; X2 ; X3 ; A

Grades Reference:
Grade___Minimum Intensity(@20mA)___Grade___Minimum Intensity(@20mA)
X1____________Ive5 mcd ____________X3____________Ive10 mcd
X2____________Ive10 mcd ___________A_____________Ive20 mcd

Note:
1. All measurements are done with AOC's standard testing equipment
2. Luminance intensity is measured on bare chip

AOC-112GLA is a green color emitting AlInGaP LED grown by MOCVD tech. Its
Structure enables enhanced quantum efficiency.