Diodes DMK2308-000 DMK2308

Features
- Designed for High Volume Designs
- High Frequency (20100 GHz)
- Exceeds Environmental Requirements for
MIC & Hybrid Applications
- Designed for Low Junction Capacitance
and Low Series Resistance
- Applications Include PCN Mixers and
Circuits, As Well As Low Power, Fast
Switching
- Low Parasitic Flip Chip Configuration
Description
This new series of GaAs Schottky barrier diodes offer high
performance at commercial market prices. They are
designed for low junction capacitance, as well as low series
resistance.Diodes are designed for MIC work (hard and soft
substrates), but the leadless design eliminates the
problems associated with mounting of beam lead diodes.
Due to its rigid construction, it exceeds environmental
requirements for MIC and hybrid applications. Diodes can
be supplied on expandable film frame for high speed pick
and place process. Standard packing will be in a gel pack.
Flexible conductive epoxy is the most effective
method for circuitry attachments. Standard mounting
temperatures should not exceed 175