DEPLETION MODE N-CHANNEL MOSFET Integrated Circuit
Product Details
1. Carrier mobility ~700 cm2/V-sec
2. Threshold voltage -0.3 to -1.0 V
3. Input impedance (dc) 1014 W
4. Reliability 10 Years
5. Channel Width/Length (W/L) 50 or 100 or larger
6. (To obtain large transconductance and low noise).
7. Leakage current across Gate-Source, Gate-Drain, Gate-Substrate should be lesser than nano amperes (10-9 A).
is a custom made discrete Depletion mode n-MOSFET device with following features
