Mimix Broadbands 18.0-50.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 17.0 dB
with a noise figure of 5.0 dB across the band. The
device also includes 30.0 dB gain control and a +15
dBm P1dB compression point. This MMIC uses Mimix
Broadbands GaAs PHEMT device model technology,
and is based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process. This device is well suited for microwave,
millimeter-wave and wideband military applications.
18.0-50.0 GHz GaAs MMIC Distributed Amplifier |
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