Distributed Amplifiers

Mimix Broadbands distributed 2.0-22.0 GHz GaAs
MMIC power amplifier has a small signal gain of 11.0
dB with a +24.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadbands GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Test Instrumentation, Military,
Space, Microwave Point-to-Point Radio, SATCOM and
VSAT applications.