Distributed Amplifiers

Mimix Broadbands 2.0-18.0 GHz GaAs MMIC
distributed low noise amplifier has a small signal gain
of 8.5 dB with a noise figure of 4.5 dB across the band.
This MMIC uses Mimix Broadbands GaAs PHEMT device
model technology, and is based upon optical beam
lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well
suited for fiber optic, microwave radio, military, space,
telecom infrastructure, test instrumentation and VSAT
applications.