HY57V641620FTP-7 HY57V641620 Synchronous DRAM IC

• Voltage: VDD, VDDQ 3.3V supply voltage
• All device pins are compatible with LVTTL interface
• 54 Pin TSOPII (Lead or Lead Free Package)
• All inputs and outputs referenced to positive edge of system clock
• Data mask function by UDQM, LDQM
• Internal four banks operation
• Auto refresh and self refresh
• 4096 Refresh cycles / 64ms
• Programmable Burst Length and Burst Type
  - 1, 2, 4, 8 or full page for Sequential Burst
  - 1, 2, 4 or 8 for Interleave Burst
• Programmable CAS Latency; 2, 3 Clocks

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All inputs andoutputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achievevery high bandwidth.
All input and output voltage levels are compatible with LVTTL.

HY57V641620F(L/S)TP is offering fully synchronous operation referenced to a positive edge of the clock.

The Hynix HY57V641620F(L/S)TP series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth.
HY57V641620F(L/S)TP is organized as 4banks of 1,048,576x16.

Description

ICs of  HY57V641620

ICs of HY57V641620
1.64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
2.Pb-Free