IC EEPROM SST29EE020-120-4C-PH

The SST Page-Write EEPROM offers in-circuit electrical write capability. The SST29EE/LE/VE020 does not require separate Erase and Program operations. The internally timed Write cycle executes both erase and program transparently to the user. The SST29EE/LE/VE020 have industry standard optional Software Data Protection, which SST recommends always to be enabled. The SST29EE/LE/ VE020 are compatible with industry standard EEPROM pinouts and functionality.

Device Operation:

The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/LE/VE020 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE/LE/VE020 conform to JEDEC standard pinouts for byte-wide memories. Featuring high performance Page-Write, the SST29EE/LE/ VE020 provide a typical Byte-Write time of 39 sec. The entire memory, i.e., 256 KByte, can be written page-bypage in as little as 10 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a Write cycle. To protect against inadvertent write, the SST29EE/LE/VE020 have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST29EE/LE/VE020 are offered with a guaranteed PageWrite endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST29EE/LE/VE020 are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST29EE/LE/VE020 significantly improve performance and reliability, while lowering power consumption. The SST29EE/LE/VE020 improve flexibility while lowering the cost for program, data, and configuration storage applications. To meet high density, surface mount requirements, the SST29EE/LE/VE020 are offered in 32-lead PLCC and 32-lead TSOP packages. A 600-mil, 32-pin PDIP package is also available. See Figures 1, 2, and 3 for pinouts.

PRODUCT DESCRIPTION:

 * Packages Available - 32-lead PLCC - 32-lead TSOP (8mm x 20mm) - 32-pin PDIP

* JEDEC Standard - Flash EEPROM Pinouts and command sets

* TTL I/O Compatibility

* Product Identification can be accessed via Software Operation

* Hardware and Software Data Protection

 * End of Write Detection - Toggle Bit - Data# Polling

* Automatic Write Timing - Internal VPP Generation

* Latched Address and Data

- 2.7-3.6V operation: 200 ns

- 3.0-3.6V operation: 200 ns

- 4.5-5.5V operation: 120 ns

 - Complete Memory Rewrite: 10 sec (typical) - Effective Byte-Write Cycle Time: 39 s (typical) * Fast Read Access Time

- 128 Bytes per Page, 2048 Pages - Page-Write Cycle: 5 ms (typical)

* Fast Page-Write Operation

- Standby Current: 10 A (typical)

- Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V

* Low Power Consumption

- Greater than 100 years Data Retention

 - Endurance: 100,000 Cycles (typical)

* Superior Reliability

 - 4.5-5.5V for SST29EE020 - 3.0-3.6V for SST29LE020 - 2.7-3.6V for SST29VE020

FEATURES:
* Single Voltage Read and Write Operations

SST29EE020-120-4C-PH
PDIP-32
SST
2 Mbit (256K x8) Page-Write EEPROM