semiconductor sensor

-

I=1mA2

d

Median Symmetry

800

I=1mA

R(MR1+MR2)

0.16

Va=5V1

Output Voltage

min

Condition

Symbol

Item

mW

44

Pmax

Loss Tolerance

V

100

VI

V

5.5

Maximum Applied Voltage

Unit

Rate

Symbol

Item

The Magnetic Resistance Sensor MRS-118 consists of indium-antimonic magnetic resistor whose resistance varies according to applied magnetic field and permanent magnet, which gives magnetic bias to the sensor.
When a magnetic substance approaches to the surface of detector the magnetic flux density operating on magnetic resistor is changes and it acquires output signal according to the change of its resistance. The advantage of MRS-118 is that the detector surface has a broad area of 9mm thus can collect a lot of data.
It is also a model that would not easily be affected by the carriers position.