GH-SW640 InGaAs area image sensors are two-dimensional image sensors that have a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs
photodiodes for short wavelength infrared (SWIR, 900nm-1700nm) and extended wavelength infrared (Vis-SWIR, 400nm-1700nm) regions.
The detector can be supplied in two types of metallic package:
Nitrogen & Vacuum, which both include a Thermo-Electric Cooler (TEC)
It is well-adapted to a large range of applications, such as surveillance, hyperspectral imaging, remote sensing, machine vision, industrial sorting, process inspection, and science.
TECHNICAL INFORMATION OF GH-SW640
Key Features GH-SW640
Sensor Type InGaAs PIN-Photodiode
Format 640x512
Pixel Pitch 15μm
Spectral Response 0.9µm-1.7µm / 0.4um-1.7µm (optional)
Integration Type Snapshot
Readout Modes ITR, IWR, CDS
Exposure Time 2μs to full frame
Maximum Full Frame Rate 300 Hz
Maximum Pixel Rate 20MHz
Output Signal Swing ≤2V
Temperature Sensor Output Yes
Quantum Efficiency(QE) >70% (1.0um-1.6um)
Noise with ROIC 35e- @HG
Dark Current 30fA@0.1V&18℃
Array Operability > 99.5% (Minimum)
Non Uniformity without Correction <5%
Dimension (W x H x D) 36mm × 25.4mm × 7.2mm
Windows Quartz / Sapphire
Number of Pins 28-pin Metal DIP Package
Packaging Characteristics Hermetically sealed
Operating Temperature - 40℃ to 70℃
Storage Temperature - 40℃ to 70℃
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